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Transistor cross references
Transistor cross references












transistor cross references

The device was about 100 times slower than contemporary bipolar transistors and was initially seen as inferior. The principles behind the device were the same as the ones that were tried by Bardeen, Shockley and Brattain in their unsuccessful attempt to build a surface field-effect device. Atalla showed that silicon dioxide is very effective in solving the problem of one important class of surface states.įollowing this Atalla and Dawon Kahng demonstrated a device that had the structure of a modern MOS transistor. Further research showed that silicon dioxide could prevent dopants from diffusing into the silicon wafer. Derick accidentally grew a layer of silicon dioxide over the silicon wafer. The structure failed to show the anticipated effects, due to the problem of surface state: traps on semiconductor the surface that hold electrons immobile. The structure resembling the MOS transistor was proposed by Bell scientists William Shockley, John Bardeen and Walter Houser Brattain, during their investigation that led to discovery of the transistor effect. The basic principle of this kind of transistor was first patented by Julius Edgar Lilienfeld in 1925.

  • 8.7 Radiation-hardened-by-design (RHBD).
  • 8.6 Double-diffused metal-oxide-semiconductor (DMOS).
  • 8.3 Metal-insulator-semiconductor field-effect transistor (MISFET).
  • 3.1 Metal-oxide-semiconductor structure.
  • Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic. The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages. The "metal" in the name MOSFET is sometimes a misnomer, because the gate material can be a layer of polysilicon (polycrystalline silicon). In depletion mode transistors, voltage applied at the gate reduces the conductivity. In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. The main advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar transistors (bipolar junction transistors/BJTs). Operating as switches, each of these components can sustain a blocking voltage of 120 V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. I am disappointed and saddened that the knowledge is not shared and will one day pass due to a lack of sharing.Two power MOSFETs in D2PAK surface-mount packages. I thought I could glean some that experience as a member. I value and respect the experience of the electronics veterans as much as I appreciate the equipment. I just thought that this forum might have some helpful people. Joining Tapeheads was part of my resources to self-help. The best help seems to be on other forums.

    transistor cross references

    To summarize, I can Google, and I can get lost in looking for things that I don't have enough background knowledge to know if it's accurate or BS. It's too bad I can't go back in time and go to DeVry in 1970, then I would know the stuff you know.

    Transistor cross references software#

    I have to do that for plenty of undocumented or under documented software APIs now anyway. If I am on my own, and just need to make my best guess from Google, then I'll do that. I also respect the experience that people have that used to and often still work on these devices. I'm on Tapeheads because I appreciate analog audio, tape and the mechanics of things.

    transistor cross references

    In another 20 years that experience will be gone and google won't have it, because those same people tend not to document things in github, or stack overflow. Those people are now in their 60s and 70s. So my alternative is to do it myself with help, and one thing that I hoped to get from this forum is experience, something that only people who in their 20s and 30s in the 1970s had. LMGTFYīut seriously, I would pay you, or someone you trust to restore my preamplifier, but it sounds like there are years of backlog all around. I even send people to this site if the question is exceedingly simple. I'm familiar with google, and when it comes to my primary experience domain I can find answers rather than lots of people asking the question. The best was an article that described looking in Mouser and inputting the specs.

    transistor cross references

    There are lots of options, some lead to other old types.














    Transistor cross references